specification:
* fabrication Process 45 nanometer high-k
* 4 cores
* Clock speed 3.20Ghz
* Multiplier 24X
* L1 Chace 32KB X 4, L2 Chace 256KB X4, L3 Chace 8MB shared.
* VID voltage range, Min. 0.85V, Max. 1.225V
* Maximum Current 110A
* TDP 130W
* Memory suport DDR3 1333, 1066, 800
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